NXP Semiconductor has developed the world’s first n-channel sub 1 milliOhm 25V MOSFET ina breakthrough for motor control and power supply design.
This is the lowest ever RDSon MOSFET in a Power-SO8 package, combining the high performance Power-S08 LFPAK package with latest Trench 6 generation silicon. The low on-resistance provides numerous performance and reliability advantages in a wide variety of demanding applications such as: power OR-ring, motor control and high efficiency synchronous buck-regulators.
“The technology for producing MOSFETs is an ongoing race to improve performance”, said John David Hughes, Senior International Product Marketing Manager of NXP. “We are using innovative techniques in the new Trench 6 process which further reduce the on-resistance. There are many advantages of the new Trench technology to our customers such as improved switching efficiency from the silicon and superior electrical and thermal resistance from the package. NXP’s Power-S08 (LFPAK) package is compatible with all widely accepted Power SO-8 PCB footprints.”
The PSMN1R2–25YL has a typical RDSon of 0.9milli Ohm for a 25V part in Power-S08 (LFPAK), and 1.0mOhm (typical) for a 30V part. In addition to launch of the world’s lowest RDSon MOSFET, NXP is announcing a new portfolio of products aimed at power supply, motion control, and industrial markets. The range includes products with operating voltages of 25, 30, 40 and 80 volts in Power-S08 (LFPAK) and TO220 packages.
For more information, visit www.nxp.com/infocus/topics/lowest_rds_mosfet/index.html