New GaN L-Band radar transistor

Paul Boughton

Macom, a leading supplier of high-performance analogue semiconductor solutions, has introduced a new GaN on SiC HEMT power transistor for L-Band pulsed radar applications.

The MAGX-001214-650L00 is a gold-metalised, pre-matched GaN on Silicon Carbide transistor that offers high peak power for a single-ended power transistor optimised for pulsed L-Band radar applications. It guarantees 650W of peak power with a typical 19.5dB of gain and 60% efficiency. The device also boasts very high breakdown voltages, which provides customers with reliable and stable operation at 50V under more extreme load mismatch conditions. The device is assembled in a high-performance ceramic flange package and has undergone Macom’s rigorous qualification and reliability testing, which offers customers advanced power with rugged performance that is ideally suited to today’s demanding radar applications.

“The MAGX-001214-650L00 is a leader in high pulsed power GaN technology with guaranteed 650W of peak output power combined with excellent gain, efficiency and reliable performance,” said Paul Beasly, product manager. “The device is an ideal candidate for customers looking to combine two power transistors and realise over 1,000W of peak power in a single pallet for next generation L-Band radar systems that require increased performance in smaller footprints.”