Mitsubishi Electric Corporation has expanded its lineup of Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs) for use in Base Transceiver Stations (BTS) operating in the 3.5GHz band of fourth generation (4G) mobile communication systems.
The four new GaN-HEMTs offer output power and efficiency levels that are among the highest currently available according to company research as of December 22nd. Samples will be released starting February 1st.
As a result of the deployment of Long Term Evolution (LTE) and LTE-Advanced mobile networks, needs are rising for BTS that can offer increased data volume, smaller size and lower power consumption.
In response, Mitsubishi Electric has developed the new GaN-HEMTs designed for use in macro BTS and large numbers of micro cells that mobile network operators are employing to increase the data capacity of their advanced 4G networks built with LTE and LTE-Advanced technologies.