Omron Electronic Components Europe has revealed new G3VH SiC-MOSFET relays with voltage ratings of 3,300V and 1,800V, providing solid-state power-switching advantages at bus and battery voltages up to 1000V and above
With elevated ratings, these relays can ensure robust, reliable switching as system designers adopt higher voltages to maximise energy efficiency and utilise smaller, lighter wires and connections. While capable of operating above normal maximum voltage limits of ordinary silicon-based relays, the new G3VH devices are longer-lasting and smaller than conventional reed relays.
The new devices are typically used in industrial drives and automation, solar and wind power generators, energy storage systems for ground-fault detection, and automated test equipment for high-voltage, wide-bandgap power semiconductors.
With back-to-back silicon carbide (SiC) MOSFETS and an optically isolated gate driver, the relays can handle high operating voltages within their compact 6-pin dual-inline package (DIP-6) outline. The relays have a turn-on time of 1ms or 2ms and can turn off within 0.2ms, thanks to their low internal capacitance, ensuring clean and efficient switching at high speeds.
With this performance, G3VH series devices enable fast response to system safety commands and shorter test cycle times in ATE applications. While SiC’s naturally high dV/dt tolerance supports stable switching even in challenging conditions, the MOSFETs can also withstand high operating temperatures and thermal stresses, enabling long cycle life in all environments.
The new devices comprise two series, including the G3VH-331, rated for 3300V, 300mA continuous load current, and 900mA pulse-on current, with total resistance of 3.5Ω between the terminals. The 1800V G3VH-181 series can handle up to 30mA continuous current and 80mA pulse current, and withstand a resistance of 120Ω.
All the new G3VH devices are type 1a (SPST, normally open) and are in production now in a choice of surface-mount and through-hole package styles.
