Accelerating time to market in data centre and automotive markets
Cambridge GaN Devices (CGD), a specialist in innovative GaN (Gallium Nitride)-based power devices, joins forces with NXP Semiconductors to accelerate time to market in data centre and automotive markets
The International Energy Agency predicts that energy use by data centres will double by 2030, making energy-efficiency improvements a key imperative. It is forecasted that the data centre power semiconductor market will see a CAGR of 11%, reaching global sales of USD 4.29 billion by 2032, while ResearchandMarkets.com have revealed that the EV traction inverter market could see a CAGR of 16.1%, reaching global sales of USD 67.6 billion in 2034.
This collaboration will enable NXP to develop GaN-based system solutions by utilising CGD’s GaN products, gaining early access to next-generation CGD GaN developments, and leveraging the team’s expertise in GaN processes and technologies. CGD will also benefit from access to NXP’s processor and analogue product portfolios, system know-how and global commercial reach, accelerating market penetration through optimised system-level solutions.
Fabio Necco, CEO, CGD, said, “By working closely with NXP, we are accelerating the shift towards a new class of GaN-based power electronics. This collaboration is about leveraging GaN performance to increase efficiency, power density and reliability into real-world data centre and automotive systems, where performance, cost and sustainability now must go hand-in-hand.”
Chris Bretz, vice president, Advanced Power Systems, NXP, said, “CGD combines advanced GaN innovation with practical, scalable power solutions, delivering superior robustness, reliability, and system-level performance. With deep device expertise and strong know-how, CGD is an ideal long-term collaborator for NXP to accelerate high-efficiency GaN adoption across high-growth markets.”
GaN semiconductors enable switching at higher frequencies and achieve greater efficiency compared to competing technologies.
The increasing power demands in data centres are driven by the rising use of AI. A single rack might have consumed 40kW in 2022, but today it can draw 200kW or more, with expectations rising to 1MW or more by 2030. The increased compute density and modern power architecture place stringent requirements on power density and the need to provide high step-down ratios while maintaining power efficiency. ICeGaN is positioned to address these requirements, enabling high switching-frequency operations, higher power density, and delivering superior reliability compared to discrete GaN solutions.
In automotive traction inverters, GaN can enhance efficiency at low load. CGD’s ICeGaN technology is single-chip GaN-based technology running on a standard driver that enables paralleling of several devices to meet the current requirements of traction inverters.
The complementary IP and set of skills of the two companies will unlock uniquely differentiated system-level solutions for customers seeking the benefits of GaN devices in these two markets.
