Toshiba Electronics Europe has launched a new -40V P-ch MOSFET suitable for use in automotive applications such as reverse battery protection and motor control.
The TJ200F04M3L offers an improved design which is capable of reducing conduction losses. It will conform to the AEC-Q101 automotive standard qualification requirements.
This new power MOSFET achieves class leading low ON-resistance by mounting a chip fabricated with Toshiba’s U-MOS VI trench process in a TO-220SM (W) package, which utilises a Cu (copper) connector. The low ON-resistance of the new product contributes to reduced conduction losses in electronic devices.
The TJ200F04M3L offers absolute maximum ratings of VDSS = - 40V, ID = - 200A and RDS(ON) Max = 1.8mΩ at VGS = 10V. The power MOSFET is capable of operating at a maximum channel temperature of 175°C.