The TJ200F04M3L offers an improved design which is capable of reducing conduction losses. It will conform to the AEC-Q101 automotive standard qualification requirements.
This new power MOSFET achieves class leading low ON-resistance by mounting a chip fabricated with Toshiba’s U-MOS VI trench process in a TO-220SM (W) package, which utilises a Cu (copper) connector. The low ON-resistance of the new product contributes to reduced conduction losses in electronic devices.
The TJ200F04M3L offers absolute maximum ratings of VDSS = - 40V, ID = - 200A and RDS(ON) Max = 1.8mΩ at VGS = 10V. The power MOSFET is capable of operating at a maximum channel temperature of 175°C.