New through-hole silicon carbide Rectifiers

Jon Lawson

SMC Diode Solutions has announced the through-hole SICR5650, SICR6650 and SICR10650 series of 650V silicon carbide (SiC) Power Schottky Rectifiers. The high-voltage series provides low total conduction losses and stable switching characteristics over temperature extremes. The single diode SICR5650 and SICR6650 rectifiers support average rectified currents of 5A and 6A respectively, whereas the common cathode, dual centre-tapped SICR10650 parts are provided with rectified currents of 5A and 10A. 

Featuring zero reverse recovery, together with switching speeds independent of operating temperature, the series are suited for employment in alternative energy inverters, power factor correction (PFC), and free-wheeling diodes. They are also appropriate in switching supply output rectification and reverse polarity protection applications. 
They can withstand high forward surge currents while ensuring robust performance over their -55ºC to +175°C operating junction temperature range. These lead-free plated devices also feature high package isolation voltage and a guard ring for long-term reliability. Additional electrical and life testing can be performed upon customer request. All SMC Diodes’ parts are traceable to the wafer lot.