New-generation of transistor arrays

Louise Smyth

Toshiba Electronics Europe has announced the launch of a new generation of highly efficient transistor arrays, the industry’s first1 with a DMOS FET2 type source-output3 driver. The new TBD62783A series succeeds the TD62783 series of bipolar transistor arrays, cutting power loss by about 40% and will find use in a wide range of applications including LED drives.

Toshiba will also launch the TBD62083A series with a DMOS FET type sink- output4 driver, as a successor to the TD62083 series of bipolar transistor arrays for applications including motors, relays and LED drives.

Demands from customers developing systems such as power supply and ON/OFF controls that combine source output and sink output products are increasing. With the launch of these new devices, Toshiba provides a DMOS FET transistor array for both output types.

The new devices operate without a base current, reducing input currents. In combination with their ability to accept high current densities while maintaining low on-resistance, the DMOS FET devices increase efficiency and ensure reduced power losses.

All devices support high-voltage, large-current drive with absolute maximum rating of the output being 50V/0.5A.

The devices are available in a range of packages including SOP18, DIP18 and SOL18 for surface mounted applications and SSOP18 (0.65mm pitch) to enable usage in space-constrained designs.

In order to achieve the high levels of integration seen in these devices, Toshiba has applied the latest BiCD5 technology. The company has positioned this as the future mainstream for analog ICs fabricated on its standard 8-inch manufacturing line, the wafer size widely used in the industry for mass production.

Notes: 1 Toshiba survey, as of September 29, 2015; 2 DMOS FET: Double-Diffused MOSFET; 3 Source output: a type of current output (Push type); 4]Sink output: a type of current output (Pull type); 5 BiCD: Process technology that allows integration of Bipolar, CMOS, and DMOS devices.