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Near infrared CCD image sensors

1st August 2016

Posted By Paul Boughton


The 8 megapixel (MP) KAI-08052 image sensor is the first device in ON Semiconductor’s CCD portfolio to use a new technology that provides up to twice the sensitivity in near-infrared (NIR) wavelengths as the company’s standard Interline Transfer CCD pixel design. This enhanced sensitivity can boost the performance of sensors in scientific and medical imaging, where samples emit or fluoresce in NIR wavelengths; or in machine vision and intelligent transportation systems (ITS), where NIR illumination is often used to better examine an object or to isolate a vehicle’s license plate.

The new CCD pixel design extends the electron capture region deeper in the silicon to better capture electrons generated by long wavelength photons. This deeper pixel well doubles the detection efficiency of NIR wavelengths and, as the well structure also isolates the photodiodes from each other, this increase in NIR sensitivity comes without any reduction in image sharpness. This boosts the modulation transfer function (MTF).

“Camera manufacturers and end customers continue to confirm that products based on both CCD and CMOS technologies will be needed in these markets, making it important that we continue to develop and advance both of these technologies,” said Herb Erhardt, Vice President and GM, Industrial and Security Division, Image Sensor Group at ON Semiconductor. “The KAI-08052 provides a significant improvement in NIR sensitivity compared to our standard pixel design, and we look forward to utilising this technology in additional products in the future.”

The KAI-08052 is available in a RoHS-compliant CPGA-67 package in Monochrome, Bayer Colour, and Sparse Colour configurations, and is fully pin compatible with the existing image sensors as well as a full family of 5.5 µm and 7.4 µm CCD image sensors, enabling camera manufacturers to quickly adopt the new device.







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