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Low on-resistance N-channel MOSFETs for load switching

20th January 2017

Posted By Paul Boughton


Toshiba Electronics Europe has introduced two N-channel MOSFETs for load switches in mobile devices that deliver low on-resistance.

The SSM6K513NU and SSM6K514NU help contribute to high system efficiency, low power consumption and are suited for use in the latest battery operated portable applications.

Use of Toshiba’s U-MOS IX-H series trench process ensures that the MOSFETs achieve low on-resistances. RDS(ON) rating are 6.5mΩ for the 30V SSM6K513NU and 8.9mΩ for the 40V SSM6K514NU. This allows the new products to reduce heat dissipation resulting from turn-on loss by approximately 40% when compared with Toshiba’s existing products, such as the SSM6K504NU.

The SSM6K513NU and SSM6K514NU are suitable for use in electric power switching applications over 10W, including small-size mobile devices that meet the USB Type-C and USB Power Delivery (PD) standards. Both MOSFETs are housed in compact SOT-1220 packages.







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