Crystal growth technology gives detector high sensitivity

Paul Boughton
Hamamatsu Photonics' Indium Arsenide Antimonide (InAsSb) detector, the P11120-901,  provides peak sensitivity in the 5µm infrared spectral band and operates over the entire range from 1.6 µm to 5.8 µm. This high sensitivity is realised via Hamamatsu’s  crystal growth technology. The InAsSb photodiode used in the P11120-901 has a planar structure which ensures a high speed response and high reliability. A typical rise time of 200 ns has been achieved with this detector structure.
Typical applications for this detector include gas analysis; with the detector covering a wide range of molecular absorption wavelengths, in particular for CO2, SOx, CO and NOx. The P11120-901 is also ideally suited for applications in thermometry (radiometry), thermal imaging, remote sensing, FTIR and IR spectrophotometry.
The P11120-901 is not limited to a peak sensitivity of 5 µm, and Hamamatsu are able to shift the peak sensitivity to longer wavelengths by altering the composition ratio of As and Sb in the detector. This means Hamamatsu can offer a tailor made InAsSb solution for your application.
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