Silicon carbide (SiC) foam, available from Goodfellow, provides the exceptional hardness, high-temperature durability and performance of solid silicon carbide, but in an extremely lightweight and versatile foam structure. This combination of properties is highly valued in a range of industries, including aerospace, defence and semiconductor manufacturing.
The matrix of cells and ligaments of silicon carbide foam is completely repeatable, regular and uniform throughout the material, yielding a rigid, highly porous and permeable structure with a controlled density of metal per unit volume. Characteristics of SiC foam include:
* Exceptional hardness (Mohs 9) and performance – outstanding resistance to scratches, wear and corrosion;
* Structural stability at high temperatures – can operate up to 2200˚C;
* High thermal and electrical conductivity – unlike most other ceramics;
* Low thermal expansion – excellent thermal shock properties;
* High surface area-to-volume ratio – very lightweight;
* Low flow resistance – high filtration efficiency.
In applications, advantages derive from both the properties of SiC and the porosity/high surface area of the foam structure:
* High-temperature filters;
* Rocket nozzles;
* Heat shielding elements;
* Heat exchangers;
* Gas diffusers;
* Porous electrodes;
* Absorbers of electromagnetic radiation.
Silicon carbide foam is available in a standard pore size of 24 pores per centimetre (60 ppi), with a bulk density of 0.29 g.cm-3, a porosity of 91 per cent and a thickness of 10mm. However, other porosities, densities and dimensions may be available upon request.